Surface core-level shifts on InP(110): Experiments and Madelung energy calculations
- 15 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (14) , 9824-9828
- https://doi.org/10.1103/physrevb.40.9824
Abstract
Photoelectron spectra of the In 4d and P 2p core levels recorded on clean, cleaved InP(110) surfaces with high resolution reveal surface core-level shifts of similar magnitude on both core levels, in contradiction to recent tight-binding calculations and an experimental study, where only a shift on the indium level was found. We have performed surface core-level-shift calculations which take into account the Madelung shift for the relaxed zinc-blende (110) geometry, and show that this contribution alone can explain the major part of the observed shifts.Keywords
This publication has 13 references indexed in Scilit:
- Chemical reactions and temperature‐dependent interface formation of Ti/InP (110)Surface and Interface Analysis, 1989
- Surface core-level binding-energy shifts for the cleaved GaP(110) surfacePhysical Review B, 1989
- Surface Core Level Shifts of Clean And Hydrogen-Covered lnSb(110)Surface Science, 1988
- Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110)Physical Review B, 1988
- Surface shifts in the In 4dand P 2pcore-level spectra of InP(110)Physical Review B, 1987
- Theory of the Chemical Shift at Relaxed (110) Surfaces of III-V Semiconductor CompoundsPhysical Review Letters, 1987
- Oxidation of InAs(110) and correlated changes of electronic surface propertiesJournal of Vacuum Science & Technology B, 1986
- Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductorsSolid State Communications, 1986
- Surface core-level shifts of 4d states of (110) cleaved InSbJournal of Physics C: Solid State Physics, 1983
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980