Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer
- 31 August 2000
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 35 (11) , 1837-1842
- https://doi.org/10.1016/s0025-5408(00)00393-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) SubstrateChinese Physics Letters, 1999
- Band-gap narrowing and potential fluctuation in Si-doped GaNApplied Physics Letters, 1999
- SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATEActa Physica Sinica, 1999
- Atomically flat (001)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaNJournal of Crystal Growth, 1998
- Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiCApplied Physics Letters, 1998
- Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)Japanese Journal of Applied Physics, 1998
- High quality GaN grown by MOVPEJournal of Crystal Growth, 1997
- Towards the Identification of the Dominant Donor in GaNPhysical Review Letters, 1995
- Thermal nitridation of the Si(110) by NH3: LEED and AES studySurface Science, 1995
- High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substratesApplied Physics Letters, 1995