Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography
- 1 September 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (5) , 2822-2824
- https://doi.org/10.1116/1.590277
Abstract
A novel bilayer resist system consisting of a 3 nm thick titanium (Ti) layer on top of a 65 nm thick poly(methylmethacrylate) (PMMA) layer was developed for mechanical nanolithography with the atomic force microscope. The ultrathin Ti layer allowed 20 nm resolution patterning with conventional silicon cantilevers, provided a proper force-depth calibration was performed before lithography. Techniques of pattern transfer were applied to fabricate chromium nanostructures and silicon nanowires from the patterned Ti/PMMA resist.Keywords
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