Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy
- 1 December 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 392 (1-3) , L63-L68
- https://doi.org/10.1016/s0039-6028(97)00708-5
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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