Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors

This publication has 13 references indexed in Scilit:

• n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors
  Applied Physics Letters, 1988
• High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• GexSi1−x strained-layer heterostructure bipolar transistors
  Applied Physics Letters, 1988
• Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
  Applied Physics Letters, 1988
• beta -SiC/Si heterojunction bipolar transistors with high current gain
  IEEE Electron Device Letters, 1988
• Physics and applications of Ge_xSi_1-x/Si strained-layer heterostructures
  IEEE Journal of Quantum Electronics, 1986
• A study of n⁺-SIPOS:p-Si heterojunction emitters
  IEEE Electron Device Letters, 1985
• Numerical simulation of hot-carrier transport in silicon bipolar transistors
  IEEE Transactions on Electron Devices, 1983
• Temperature dependence of the band gap of silicon
  Journal of Applied Physics, 1974
• Stability and Power-Gain Invariants of Linear Twoports
  IRE Transactions on Circuit Theory, 1962