Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures
- 6 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6) , 581-583
- https://doi.org/10.1063/1.104247
Abstract
Significant improvements in gating of Ge surfaces are achieved with the use of thin, pseudomorphic Si interlayers. Metal-insulator-semiconductor structures with mid-gap interface state densities of 5×1010 cm−2 eV−1 and showing no hysteresis have been realized on both n- and p-type Ge. The key elements of this technology are: surface cleaning, deposition of a thin Si interlayer, and the deposition of the gate dielectric, SiO2, all of which are performed in situ and sequentially at 300 °C in a single chamber with the remote plasma technique. Ion scattering spectroscopy shows complete coverage of the Ge surface by the Si layer. X-ray photoelectron spectroscopy shows the Si interlayer is about 18 Å thick. The Si interlayer prevents the interfacial oxidation of the underlying Ge.Keywords
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