Nonalloyed ohmic contacts to electron-beam-annealed Se-ion-implanted GaAs
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7) , 597-599
- https://doi.org/10.1063/1.91560
Abstract
High donor concentrations (n=4×1019 cm−3) have been obtained by pulsed electron beam annealing of Se‐ion‐implanted GaAs. Nonalloyed ohmic contacts with rc⩽6×10−6 Ω cm2 were formed on these samples with no surface etching. Postanneal heating above 250 °C results in a two‐stage loss of carriers.Keywords
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