Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1−xAs:Si

19 November 1990

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (21) , 2225-2227
https://doi.org/10.1063/1.103898

Abstract

The persistent photoconductivity of Si‐doped AlGaAs has been investigated by temperature‐dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature‐dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction‐band edge.

Keywords

This publication has 15 references indexed in Scilit:

Effects of the local environment on the properties of D X centers in Si-doped GaAs and dilute AlxGa1−xAs alloys
Applied Physics Letters, 1990
DXcenter in ${Ga}_{1 - x}$ ${Al}_{x}$ As alloys
Physical Review B, 1989
The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
Japanese Journal of Applied Physics, 1989
Effect of local alloy disorder on emission kinetics of deep donors (D X centers) in AlxGa1−xAs of low Al content
Applied Physics Letters, 1988
Theory of the Atomic and Electronic Structure of $DX$ Centers in GaAs and ${Al}_{x} {Ga}_{1 - x} As$ Alloys
Physical Review Letters, 1988
Fine structure of the alloy-broadened thermal emission spectra from D X centers in GaAlAs
Applied Physics Letters, 1988
A new model of deep donor centres in Al_xGa_1-xAs
Semiconductor Science and Technology, 1987
Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
Japanese Journal of Applied Physics, 1985
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
Physical Review Letters, 1977
Long-lifetime photoconductivity effect in n-type GaAlAs
Applied Physics Letters, 1977