Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films

This publication has 7 references indexed in Scilit:

• Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
• Homogeneously size distributed Ge nanoclusters embedded in SiO2 layers produced by ion beam synthesis
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
• Ion beam synthesis of gold nanoclusters in SiO2: Computer simulations versus experiments
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
• Preparation of SiO2 films with embedded Si nanocrystals by reactive r.f. magnetron sputtering
  Thin Solid Films, 1998
• Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation
  Journal of Applied Physics, 1998
• Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation
  Microelectronic Engineering, 1997
• Single charge and confinement effects in nano-crystal memories
  Applied Physics Letters, 1996