An InAlAs/InAs MODFET
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- An InAs channel heterojunction field-effect transistor with high transconductanceIEEE Electron Device Letters, 1990
- Interband tunneling in polytype GaSb/AlSb/InAs heterostructuresApplied Physics Letters, 1989
- Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperatureApplied Physics Letters, 1988
- InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength rangeApplied Physics Letters, 1988
- Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wellsJournal of Vacuum Science & Technology B, 1988
- Application of the Shubnikov-de Haas oscillations in the characterization of Si MOSFET's and GaAs MODFET'sIEEE Transactions on Electron Devices, 1987
- Velocity-field characteristics of III-V semiconductor alloys: Band structure influencesJournal of Applied Physics, 1987