Capacitance-voltage characteristics of multiple-quantum-well semiconductor heterostructures

This publication has 14 references indexed in Scilit:

• Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor
  Japanese Journal of Applied Physics, 1995
• Modeling of Electron Injection and Transport in Multiple Quantum Well Infrared Photodetectors
  Japanese Journal of Applied Physics, 1995
• Magnetocapacitance spectroscopy of multilayer electron systems in wide parabolic wells
  Superlattices and Microstructures, 1994
• Giant capacitance oscillations related to the quantum capacitance in GaAs/AlAs superlattices
  Applied Physics Letters, 1994
• Quantum-well infrared photodetectors
  Journal of Applied Physics, 1993
• Regular periodic intersubband photocurrent peaks in a multiple double-well structure
  Physical Review B, 1993
• Carrier profile evaluation for a Zn-doped InGaAsP/InGaAsP multiquantum well using a low-temperature capacitance-voltage method
  Applied Physics Letters, 1993
• Direct determination of the electron-tunneling escape time from a GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum well by transient-capacitance spectroscopy
  Physical Review B, 1991
• Analytical calculation of the capacitance associated with a single quantum well located in a junction
  Journal of Applied Physics, 1991
• High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
  Applied Physics Letters, 1990