Vapour phase growth of mixed III–V compounds in the Ga-In-As-P system
- 1 March 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (2) , 269-288
- https://doi.org/10.1016/0022-0248(84)90210-0
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Vapour phase hetero-epitaxy: Growth of GaInAs layersJournal of Crystal Growth, 1982
- Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD processJournal of Crystal Growth, 1980
- Thermodynamic analysis of GaxIn1-xAsyP1-y CVD: Ga-In-As-P-H-Cl systemJournal of Crystal Growth, 1980
- Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy techniqueProgress in Crystal Growth and Characterization, 1979
- Vapor Phase Epitaxial Growth and Characterization of Ga1-yInyAs1-xPxQuaternary AlloysJapanese Journal of Applied Physics, 1977
- Calorimetric studies of the heats of formation of IIIB-VB adamantine phasesThermochimica Acta, 1974
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974
- Modified entrainment method for measuring vapour pressures and heterogeneous equilibrium constants. Part 4.—The gallium arsenide/hydrogen chloride systemJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1974
- Mass Spectrometric Studies of Vapor Phase Crystal GrowthJournal of the Electrochemical Society, 1971
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966