One-dimensional growth mechanism of crystalline silicon nanowires
- 26 January 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 136-140
- https://doi.org/10.1016/s0022-0248(98)00953-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Silicon nanowires prepared by laser ablation at high temperatureApplied Physics Letters, 1998
- Transmission electron microscopy evidence of the defect structure in Si nanowires synthesized by laser ablationChemical Physics Letters, 1998
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Controlling the size, structure and orientation of semiconductor nanocrystals using metastable phase recrystallizationNature, 1997
- Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealingApplied Physics Letters, 1997
- Optical properties of Si nanocrystals prepared by magnetron sputteringApplied Physics Letters, 1996
- Doping of silicon in molecular beam epitaxy systems by solid phase epitaxyApplied Physics Letters, 1984
- Resonance enhanced two-photon ionization studies in a supersonic molecular beam: Bromobenzene and iodobenzeneThe Journal of Chemical Physics, 1980
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- The influence of dislocations on crystal growthDiscussions of the Faraday Society, 1949