Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

15 November 1984

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 45 (10) , 1086-1088
https://doi.org/10.1063/1.95024

Abstract

Details of the temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors (HBT’s) are reported for the first time. Unlike homojunction transistors, the gain initially increases with decreasing temperature from 425 K followed by a decrease towards 77 K at a temperature which is dependent on AlAs mole fraction in the emitter. Variation of gain with temperature is much smaller than what is normally seen in homojunction transistors adding another advantage in favor of the HBT’s. Hole injection current into the emitter and parasitic recombination currents are shown to be the reasons for the observed temperature dependence of gain.

Keywords

This publication has 12 references indexed in Scilit:

High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
IEEE Electron Device Letters, 1984
Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
Journal of Applied Physics, 1983
Heterostructure bipolar transistors: What should we build?
Journal of Vacuum Science & Technology B, 1983
Medium-power GaAs bipolar transistors
Microelectronics Journal, 1982
Heterostructure bipolar transistors and integrated circuits
Proceedings of the IEEE, 1982
Heavy doping effects in p-n-p bipolar transistors
IEEE Transactions on Electron Devices, 1980
Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
Journal of Applied Physics, 1973
Electron diffusion length in solution-grown GaAs : Ge
Applied Physics Letters, 1973
Investigation of current-gain temperature dependence in silicon transistors
IEEE Transactions on Electron Devices, 1969
The temperature dependence of ideal gain in double diffused silicon transistors
IEEE Transactions on Electron Devices, 1968