Phonon-assisted recombination in a multiple-quantum-well LPE InP-In1−xGaxP1−zAsz heterostructure laser
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1) , 45-47
- https://doi.org/10.1063/1.90924
Abstract
By means of computer‐controlled liquid‐phase epitaxy, multiple‐quantum‐well InP‐In1−xGaxP1−zAsz (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼160 Å) and coupling barrier size are grown and are examined in photoluminescence. Laser operation (77 °K) of a six‐well five‐barrier undoped quaternary quantum‐well heterostructure is identified an LO phonon energy (1×h/ωLO∼30 meV) below the lowest confined‐particle transitions (No. 1 e→hh, E1) or at energy h/ω∼E1−h/ωLO.Keywords
This publication has 8 references indexed in Scilit:
- Determination of the valence-band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum-well luminescenceApplied Physics Letters, 1979
- Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laserApplied Physics Letters, 1979
- Lattice vibrations of In1−xGaxAsyP1−y quaternary compoundsApplied Physics Letters, 1978
- Single and multiple thin-layer (L z≲400 A) In1−xGaxP1−zAsz-InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)Journal of Applied Physics, 1978
- Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junctionApplied Physics Letters, 1977
- Defect- and phonon-assisted tunneling in LPE In1−xGaxP1−zAsz DH laser diodes (λ∼1 μm)Journal of Applied Physics, 1977
- LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active regionApplied Physics Letters, 1977
- Phonon and Polariton Modes in a SuperlatticeApplied Physics Letters, 1972