Investigation of short time donor annihilation in silicon
- 1 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3) , 299-301
- https://doi.org/10.1063/1.95665
Abstract
We have investigated the annealing of the oxygen donor in silicon in the temperature range 550–700 °C using Heatpulse lamp annealing in the time range of 1–1200 s. As-grown silicon wafers can contain donors due to cooling through 450 °C as a part of the crystal growth process. A 1-s anneal at 650 °C is sufficient to eliminate these donors completely. Intentionally created donors were annealed in order to determine reaction kinetics. A second-order process involving the donor plus another species fits the data, with an Arrhenius behavior as a function of temperature. The activation energy for this process is 1.7 eV.Keywords
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