Scanning Eectron Beam Annealing of Oxygen Donors in Czochralski Silicon
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The destruction of the oxygen donor complex in Czochralski silicon has been studied using scanning electron beam annealing in the range 550°C to 1050° C for 5s to 1000s. A two stage annealing schedule ensured a rapid rise to the target temperature and overscanning provided a uniform, non-distorting heating field. Four point probe and spreading resistance measurements showed a very rapid donor destruction rate above 650° C; between 550° C and 650°C the lower donor destruction rate allowed a study of the annealing behaviour.Keywords
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