Impurity-induced layer-disordered buried heterostructure AlxGa1−xAs-GaAs quantum well edge-injection laser array
- 16 February 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (7) , 392-394
- https://doi.org/10.1063/1.98209
Abstract
A laser array is described that makes use of edge injection into two sides (two ‘‘edges’’) of a stack of three AlxGa1−xAs‐GaAs multiple quantum well active regions. The edge‐injection array is realized by impurity‐induced layer disordering, which forms a higher gap Si‐doped n‐type emitter that edge injects electrons into either side of a stack of three lower gap multiple quantum well p‐type active regions. The far‐field beam divergence in the vertical direction (θ⊥) of the array diode is reduced from 45° to 15° as determined by the laser operation, for comparison, of one of the quantum well active regions (oxide‐defined stripe geometry diode).Keywords
This publication has 7 references indexed in Scilit:
- Photopumped laser operation of AlxGa1−xAs-GaAs quantum well heterostructures with Se and Mg sheet dopingApplied Physics Letters, 1986
- Single-mode single-lobe operation of broad area AlxGa1−xAs-GaAs quantum well lasersApplied Physics Letters, 1986
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disorderingApplied Physics Letters, 1985
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981