Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

This publication has 16 references indexed in Scilit:

• Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers
  Applied Physics Letters, 1992
• Photoluminescence of Si_1-xGe_x/Si Quantum Well Structures
  Japanese Journal of Applied Physics, 1991
• Excitonic photoluminescence from Si-capped strainedSi1−xGexlayers
  Physical Review B, 1991
• Electroluminescence from a pseudomorphic Si0.8Ge0.2 alloy
  Applied Physics Letters, 1991
• Well-resolved band-edge photoluminescence of excitons confined in strained ${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ quantum wells
  Physical Review Letters, 1991
• Electroluminescence and photoluminescence from Si1−xGex alloys
  Applied Physics Letters, 1991
• Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy
  Applied Physics Letters, 1990
• Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys
  Applied Physics Letters, 1990
• GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
  Journal of Vacuum Science & Technology A, 1984
• Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
  Applied Physics A, 1974