Photorefractive wave mixing in undoped liquid encapsulated Czochralski GaAs at 1.5 μm: Validation of photorefractive modeling
- 16 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20) , 2640-2642
- https://doi.org/10.1063/1.111477
Abstract
International audienceWe present photorefractive measurements in undoped GaAs performed at 1.06 pm, 1.32 ,um, and at 1.55 ,um. Using concentrations of EL2 0/+ that we determined through optical absorption and electron paramagnetic resonance measurements in the same sample, we show that a single defect model with an electron-hole competition quantitatively explains our results of photorefractive wave mixingKeywords
This publication has 16 references indexed in Scilit:
- Temperature dependence of the photorefractive effect in InP:Fe: role of multiple defectsJournal of the Optical Society of America B, 1992
- Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideApplied Physics A, 1992
- Thermally induced hole-electron competition in photorefractive InP:Fe due to the Fe2+ excited stateApplied Physics Letters, 1990
- Photorefractive characterization of deep level compensation in semi-insulating GaAsApplied Physics Letters, 1989
- Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-WafersJapanese Journal of Applied Physics, 1989
- Hole photoionization cross sections of EL2 in GaAsApplied Physics Letters, 1988
- Beam coupling in undoped GaAs at 106 μm using the photorefractive effectOptics Letters, 1984
- The role of deep-level centers and compensation in producing semi-insulating GaAsJournal of Applied Physics, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Refractive Index of GaAsJournal of Applied Physics, 1964