Two-dimensional electron gas formed in a back-gated undoped heterostructure
- 6 April 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (14) , 1745-1747
- https://doi.org/10.1063/1.121171
Abstract
By using a back-gate operation, a high-quality two-dimensional electron gas(2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3×10 6 cm 2 /V s at 1.6 K is obtained for the structure without any compensating surfacedoping. The electron density is controllable down to 7×10 9 cm −2 . The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density.Keywords
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