2.6 Surface resistance measurement as an aid in controlling the fabrication of silicides
- 1 January 1977
- Vol. 27 (3) , 209-211
- https://doi.org/10.1016/0042-207x(77)90058-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Studies of formation of silicides and their barrier heights to siliconPhysica Status Solidi (a), 1973
- Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodesSolid-State Electronics, 1972
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- Temperature Coefficients of Resistance of Metallic Films in the Temperature Range 25° to 600°CJournal of Applied Physics, 1959