Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011̄4} Substrates
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11R) , 3655
- https://doi.org/10.1143/jjap.31.3655
Abstract
Homoepitaxial chemical vapor deposition of 6H-SiC at low temperatures on {011̄4} substrates has been investigated. The crystal growth was carried out using a SiH4-C3H8-H2 system in the temperature range of 1000∼1500°C. Crystallinity of grown layers was characterized by means of reflection high-energy electron diffraction and etch-pit observation. The influences of surface polarity and growth conditions on crystallinity of grown layers were investigated. Significant effects of C/Si ratio on the growth were observed. Homoepitaxial growth of 6H-SiC was realized on (01̄14̄)C-face substrates at temperatures as low as 1100°C, which is 700°C lower than that on {0001} basal planes.Keywords
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