Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
- 1 March 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (5) , 3009-3011
- https://doi.org/10.1063/1.369621
Abstract
We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor–insulator–semiconductor structure. The band structure and the charge distribution are strongly influenced by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures.This publication has 9 references indexed in Scilit:
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Self-heating in high-power AlGaN-GaN HFETsIEEE Electron Device Letters, 1998
- Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substratesApplied Physics Letters, 1998
- The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructuresApplied Physics Letters, 1998
- Double Channel AlGaN/GaN Heterostructure Field Effect TransistorMRS Proceedings, 1998
- Piezoeffect and gate current in AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 1997
- High-temperature performance of AlGaN/GaN HFETs on SiC substratesIEEE Electron Device Letters, 1997
- AlGaN-GaN heterostructure FETs with offset gatedesignElectronics Letters, 1997
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993