TEM observations of GaAsAlGaAs heteroepitaxial layers on (100)Si using a GaAs lift-off technique
- 31 March 1991
- journal article
- Published by Elsevier in Materials Letters
- Vol. 10 (11-12) , 525-531
- https://doi.org/10.1016/0167-577x(91)90221-q
Abstract
No abstract availableKeywords
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