Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 918-923
- https://doi.org/10.1016/0022-0248(94)91164-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxyJournal of Crystal Growth, 1994
- Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor depositionApplied Physics Letters, 1993
- Low temperature growth and characterization of ZnSe films grown on GaAsJournal of Electronic Materials, 1993
- Low temperature MOVPE growth of ZnSe with ditertiarybutylselenideJournal of Crystal Growth, 1992
- Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II–VI semiconductorsJournal of Crystal Growth, 1992
- The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVDSemiconductor Science and Technology, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodesJournal of Crystal Growth, 1991
- Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSeJournal of Crystal Growth, 1990
- Analytical models for growth by metal organic vapour phase epitaxy: I. Isothermal modelsSemiconductor Science and Technology, 1990