Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 412-417
- https://doi.org/10.1016/0022-0248(94)90843-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Low temperature growth and characterization of ZnSe films grown on GaAsJournal of Electronic Materials, 1993
- Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source PrecursorJapanese Journal of Applied Physics, 1993
- Growth and photoluminescence investigations of phosphorus- and iodine-doped MOVPE ZnTe layersJournal of Crystal Growth, 1993
- Resonant excitation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe layersJournal of Luminescence, 1992
- The MOVPE growth and doping of ZnTeSemiconductor Science and Technology, 1991
- Control of prereaction in the metalorganic chemical vapour deposition of zinc- and cadmium-based chalcogenidesJournal of Crystal Growth, 1991
- Arsenic doped ZnSe grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- High-purity ZnSe obtained by metalorganic chemical vapor deposition epitaxyJournal of Applied Physics, 1981
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Concentration and Temperature Dependence of Impurity-to-Band Activation EnergiesPhysical Review B, 1972