Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO2 Matrix
- 1 August 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (8A) , L792-795
- https://doi.org/10.1143/jjap.39.l792
Abstract
The room-temperature operation of a single-electron narrow-channel memory device has been demonstrated by the combined fabrication of a narrow-channel (20 nm wide by 80 nm long) field-effect transistor (FET) defined by electron-beam lithography and nanocrystalline Si (nc-Si) dots formed by annealing a thin film of SiO x (x<2). Electrons are injected into nc-Si floating gate dots in discrete units, as observed by the stepwise increase in the threshold shift with writing bias, which is expected for Coulomb repulsion within the nc-Si dot. Time-dependent measurement of the channel current under the floating gate shows stepwise loss of charge, with a lifetime of each stored electron of about 500 s at room temperature. Measurements at low temperature (20 K) show similar discrete steps in memory writing.Keywords
This publication has 14 references indexed in Scilit:
- Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decompositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Room temperature operation of Si single-electron memory with self-aligned floating dot gateApplied Physics Letters, 1997
- A Silicon Single-Electron Transistor Memory Operating at Room TemperatureScience, 1997
- Single charge and confinement effects in nano-crystal memoriesApplied Physics Letters, 1996
- Visible photoluminescence in Si+-implanted thermal oxide films on crystalline SiApplied Physics Letters, 1994
- The composition and structure of SIPOS: A high spatial resolution electron microscopy studyJournal of Materials Research, 1993
- Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous:H (0<r<2) alloy systemPhysical Review B, 1989
- The Volume Fraction of Crystalline Silicon in Semi‐Insulating Polycrystalline Silicon (SIPOS)Journal of the Electrochemical Society, 1988
- High resolution electron microscopic and spectroscopic characterization of semi-insulating polycrystalline silicon and its interface with single-crystal siliconApplied Physics Letters, 1986
- Annealing characteristics of Si-rich SiO2 filmsApplied Physics Letters, 1985