A contribution to the theory of beam-induced current characterization of dislocations
- 1 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (9) , 6387-6393
- https://doi.org/10.1063/1.348841
Abstract
A new procedure of calculating the electron‐beam‐induced current contrast of a crystal defect is presented which yields an exact solution for the contrast of a surface‐perpendicular dislocation both in a Schottky diode and in a planar p‐n diode. The calculations are based on the bulk recombination model describing a dislocation as a cylindrical inhomogeneity (with radius rd) where the total lifetime (τ’) is lower than that outside the cylinder. Evaluations of the exact solution for the dependence of the contrast on the electron range show that (i) the input parameters of the model, rd and τ’, can be consistently determined from the characteristic of the contrast versus the electron range, and (ii) the traditionally used first‐order recombination strength is not a generally valid measure of the recombination activity of a surface‐perpendicular dislocation.This publication has 13 references indexed in Scilit:
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