Residual defects in SIMOX: threading dislocations and pipes
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Some techniques are discussed for monitoring dislocations and stacking faults in SIMOX (separation by implantation of oxygen) films. Also, a different type of defect, a silicon pipe running through the buried oxide, has been observed. The origin of these defects and a technique for detecting them are described.<>Keywords
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