Growth of highly oriented tin oxide thin films by laser evaporation deposition
- 29 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (18) , 1879-1881
- https://doi.org/10.1063/1.103998
Abstract
Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 Å per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 Å) is above 75%.Keywords
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