Phase formation in the Pd-InP system

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Abstract
The interaction of 40-nm Pd layers on chemically cleaned (100) InP substrates has been examined. The samples were isochronally annealed in an Ar-5%H2 ambient at temperatures from 175 to 650 °C. Transmission electron microscopy, x-ray diffraction, and Auger electron spectroscopy were used to study the phases that formed. The reaction began upon deposition. With subsequent annealing at 175 °C, an amorphous ternary phase of approximate composition Pd4.8InP0.7 was formed. For samples annealed at 215 and 250 °C, the tetragonal ternary phase, Pd5InP (a=0.3928 nm, c=0.6917 nm), was found. After higher-temperature annealing (45–650 °C), the simple cubic phase PdIn (a=0.326 nm), was observed.