Processing and Device Issues of High Permittivity Materials for Drams
- 1 January 1995
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Trends in the development of ULSI DRAM capacitorsIntegrated Ferroelectrics, 1994
- Sputtered ferroelectric thin films for dynamic random access memory applicationsIntegrated Ferroelectrics, 1993
- Thin TiO2 Films Prepared by Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1993
- Base electrodes for high dielectric constant oxide materials in silicon technologyJournal of Materials Research, 1992
- Reduced-pressure MOCVD of highly crystalline BaTiO3 thin filmsJournal of Materials Research, 1992
- Oxidation of titanium nitride in room air and in dry O2Journal of Applied Physics, 1991
- Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film CapacitorsMRS Proceedings, 1990
- Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMsProceedings of the IEEE, 1989
- A reliable 1-Mbit DRAM with a multi-bit-test modeIEEE Journal of Solid-State Circuits, 1985
- Oxidation kinetics of TiN thin filmsJournal of Applied Physics, 1981