Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes
- 15 October 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 56 (15) , 9201-9204
- https://doi.org/10.1103/physrevb.56.9201
Abstract
The behavior of the electric field and the charge-density distribution in semi-insulating gallium arsenide Schottky diodes have been analyzed by optical-beam-induced current and surface potential measurements. The electric field exhibits three different regions across the detector, the characteristics of which depend on the reverse applied voltage. Furthermore, a positive box-shaped space charge region exists, separated from the Schottky barrier by a neutral space-charge region, and widens and moves towards the Ohmic contact at increasing the reverse bias voltage. This study adds substantial information to the knowledge of the space-charge distribution in semi-insulating Schottky diodes, discriminates between the existing models on the electric field, and provides essential information to understand nuclear detector performance.Keywords
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