Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- 2.5 W CW X-band heterojunction bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High power and high efficiency monolithic HBT VCO circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- X-band GaInP/GaAs power heterojunction bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistorElectronics Letters, 1992
- A low-noise K-Ka band oscillator AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1991
- Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistorsElectronics Letters, 1990