N-Type Silicon Films Produced by Hot Wire Technique
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor depositionJournal of Applied Physics, 1999
- Electronic and optical properties of hot-wire-deposited microcrystalline siliconJournal of Non-Crystalline Solids, 1998
- Hot-Wire CVD Poly-Silicon Films for Thin Film DevicesMRS Proceedings, 1998
- Microcrystalline Silicon n-i-p Solar Cells Deposited Entirely by the Hot-Wire Chemical Vapor Deposition TechniqueMRS Proceedings, 1998
- Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon FilmsMRS Proceedings, 1997
- P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor depositionApplied Surface Science, 1995
- Factors Influencing the Quality of a-Si:H Films Deposited by the “HOT WIRE” TechniqueMRS Proceedings, 1994
- Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1986
- Vibrational Spectra of Hydrogen in Silicon and GermaniumPhysica Status Solidi (b), 1983
- a-Si : H produced by high-temperature thermal decomposition of silaneJournal of Applied Physics, 1979