Analytical model and characterization of small-geometry buried-channel depletion MOSFETs
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 18 (6) , 784-793
- https://doi.org/10.1109/JSSC.1983.1052033
Abstract
Small-geometry buried-channel depletion MOSFETs (BCD-MOSFETs) are characterized based on an analytical model that includes short-channel, narrow-channel, and carrier-velocity saturation effects. The drain current is calculated based on the surface electrons induced by the gate-bias voltage and the buried-channel junction FET. The narrow-channel effect is modeled not only by the additional depletion-layer charges created by a fringing-field effect in the field region, but also by the effective channel width as a function of gate-bias voltage. Surface-electron mobility is modeled as a function of the vertical and lateral electrical fields created by the gate-bias and drain voltages, while bulk-electron mobility is described as a function of the lateral electric field due to the drain voltage. Theoretical results on drain current are in good agreement with experimental results.Keywords
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