Nonplanar VLSI Device Analysis Using the Solution of Poisson's Equation
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 585-597
- https://doi.org/10.1109/jssc.1980.1051442
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- A calibrated model for the subthreshold operation of a short channel MOSFET including surface statesIEEE Journal of Solid-State Circuits, 1979
- Charge-coupled device structures for VLSI memoriesIEEE Transactions on Electron Devices, 1979
- Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitorsIEEE Transactions on Electron Devices, 1979
- Characteristics of the overlaid charge-coupled deviceIEEE Transactions on Electron Devices, 1979
- Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gatesIEEE Transactions on Electron Devices, 1976
- Two-dimensional computer simulation for switching a bipolar transistor out of saturationIEEE Transactions on Electron Devices, 1975
- A numerical analysis of the d.c. performance of small geometry lateral transistorsSolid-State Electronics, 1974
- Threshold voltage from numerical solution of the two-dimensional MOS transistorIEEE Transactions on Circuit Theory, 1973
- Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devicesElectronics Letters, 1968
- The Determination of the Optimum Accelerating Factor for Successive Over-relaxationThe Computer Journal, 1961