X-ray diffraction peak profile analysis of TiNx films prepared on silicon by reactive ion beam assisted deposition
- 1 January 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 195 (1) , 213-224
- https://doi.org/10.1016/0040-6090(91)90273-z
Abstract
No abstract availableKeywords
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