Power FETs Families. Capabilities and Limitations from 1 to 100 GHz
- 1 October 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 88-101
- https://doi.org/10.1109/euma.1994.337200
Abstract
The considerable explosion these last three years of power MMICs based on the pseudormorphic GaInAs channel (PM HEMT) has crown the leader position of this device for power applications. Initially considered to be essentially promised to ultra low noise amplification it has gained record drain current and cutt-off frequencies together with remarkable progress in breakdown voltage. Owing to its maturity and reliabily it now permits realization of nearly 1 watt modules at Q and even V bands but it is also progressively surpassing MESFETs and able to compete with HBTs in the microwave low frequency range, for example in the mobile communications market. The question to be asked now is, first, what can be the ultimate expansion of the pseudomorphic HEMT technology and, second, among the new emerging technologies what can be expected as future power FETs developments.Keywords
This publication has 17 references indexed in Scilit:
- Power PHEMT module delivers 4 watts, 38% P.A.E. over the 18.0 to 21.2 GHz bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1W/mm power pseudomorphic HFET with optimised recesstechnologyElectronics Letters, 1994
- Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As graded channel pseudomorphic HEMT's with high channel-breakdown voltageIEEE Electron Device Letters, 1994
- A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applicationsIEEE Electron Device Letters, 1993
- Dependence of ionization current on gate bias in GaAs MESFETsIEEE Transactions on Electron Devices, 1993
- Microwave performance of 0.4 μm gate metamorphic In 0.29 Al 0.71 As/In 0.3 Ga 0.7 As HEMT on GaAs substrateElectronics Letters, 1993
- V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT'sIEEE Transactions on Microwave Theory and Techniques, 1993
- An InP MISFET with a power density of 1.8 W/mm at 30 GHzIEEE Electron Device Letters, 1990
- A new approach to the RF power operation of MESFETsIEEE Transactions on Microwave Theory and Techniques, 1989
- Theoretical analysis of the DC avalanche breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1983