Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As graded channel pseudomorphic HEMT's with high channel-breakdown voltage
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (1) , 33-35
- https://doi.org/10.1109/55.289470
Abstract
A new Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As pseudomorphic HEMT where the InAs mole fraction of the Ga/sub 1/spl minus/x/In/sub x/As channel was graded (x=0.53/spl rarr/0.65/spl rarr/0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al/sub 0.25/In/sub 0.75/P Schottky layer increased the Schottky barrier height. Devices having 0.5 /spl mu/m gate-length showed g/sub m/ of 520 mS/mm and I/sub max/ of 700 mA/mm. The gate-drain (BV/sub g/spl minus/d/) and source-drain (BV/sub d/spl minus/s/) breakdown voltages were as high as /spl minus/14 and 13 V, respectively. An f/sub T/ of 70 GHz and f/sub max/ of 90 GHz were obtained.Keywords
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