Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
- 13 December 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (24) , 3838-3840
- https://doi.org/10.1063/1.125473
Abstract
Recombination balance parameters for GaN/InGaN/AlGaN single-quantum-well green-lightemitting diodes are extracted from optical power and carrier lifetime measurements. The radiative recombination coefficient B is found to depend on two-dimensional carrier density N, with a low-carrier-density limit of B0=1.2×10−4 cm2/s. Sublinearity of the light–current characteristic at temperatures ⩾300 K is associated with a nonradiative process whose rate is proportional to ∼N4.8. The external quantum efficiency of 5.5% at 20 mA results from the internal quantum yield of 63% and the photon extraction efficiency of 8.7%. At low temperatures, a nonradiative loss term proportional to ∼N9 is also identified.Keywords
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