MOCVD growth of CdTe and CdHgTe at 350°C using a new cadmium source
- 1 August 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 7 (1-2) , 22-24
- https://doi.org/10.1016/0167-577x(88)90074-2
Abstract
No abstract availableKeywords
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