Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 217-221
- https://doi.org/10.1016/0022-0248(90)90719-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- The potential for abrupt interfaces in CdxHg1−xTe using thermal and photo-MOVPEJournal of Crystal Growth, 1986
- Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAsApplied Physics Letters, 1986
- Photolysis-assisted OMVPE growth of CdTeMaterials Letters, 1985
- Photon assisted OMVPE growth of CdTeJournal of Crystal Growth, 1985
- Epitaxial growth of CdxHg1−xTe by photo-MOVPEMaterials Letters, 1985
- Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltellurideApplied Physics Letters, 1985
- Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTeJournal of Crystal Growth, 1984
- High quality Hg1−xCdxTe epitaxial layers by the organometallic processApplied Physics Letters, 1984
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981
- Anisotropic Photodissociation of Cadmium DimethylThe Journal of Chemical Physics, 1971