High-resolution depth monitoring of reactive ion etching of InP/InGaAs(P) MQWs using reflectance measurements
- 1 June 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (6) , 968-973
- https://doi.org/10.1088/0268-1242/11/6/021
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Science of dry etching of III-V materialsJournal of Materials Science: Materials in Electronics, 1994
- Effects of reactive ion etching on optical and electro-optical properties of GaInAs/InP based strip-loaded waveguidesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- CH4/H2 RIE of InGaAsP/InP materials: An application to DFB laser fabricationMicroelectronic Engineering, 1993
- New technique for dry etch damage assessment of semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxyApplied Physics Letters, 1992
- Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching techniqueApplied Physics Letters, 1991
- Alkane based plasma etching of GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etchingJournal of Applied Physics, 1990
- Electrical and structural changes in the near surface of reactively ion etched InPApplied Physics Letters, 1989
- Ion‐Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP / InP Light Emitting DiodesJournal of the Electrochemical Society, 1984