Analytical study of punchthrough in buried channel P-MOSFETs

This publication has 9 references indexed in Scilit:

• A new punchthrough current model based on the voltage-doping transformation
  IEEE Transactions on Electron Devices, 1988
• The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects
  IEEE Electron Device Letters, 1988
• Performance limits of CMOS ULSI
  IEEE Transactions on Electron Devices, 1985
• Device design for the submicrometer p-channel FET with n⁺polysilicon gate
  IEEE Transactions on Electron Devices, 1984
• Short-channel MOST threshold voltage model
  IEEE Journal of Solid-State Circuits, 1982
• VLSI limitations from drain-induced barrier lowering
  IEEE Transactions on Electron Devices, 1979
• A simplified model for subpinchoff conduction in depletion-mode IGFET's
  IEEE Transactions on Electron Devices, 1978
• Ion-implanted threshold tailoring for insulated gate field-effect transistors
  IEEE Transactions on Electron Devices, 1977
• Ion Implanted MOS Transistors — Depletion Mode Devices
  Published by Springer Nature ,1977