Abrupt degradation of three types of semiconductor light emitting diodes at high temperature
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (10) , 5316-5325
- https://doi.org/10.1063/1.327445
Abstract
Abrupt degradation of three types of semiconductor light emitting diodes (LED’s), Ga1−xAlxAs double‐heterostructure (DH) LED’s, Ga1−xAlxAs/ GaAs DH LED’s, and LED‐operated Ga1−xAlxAs/ GaAs DH lasers operated at high temperature, was studied by electroluminescence topography, photoluminescence topography, and transmission electron microscopy. The following results were obtained from all types of the diodes. Dark regions which included 〈100〉 dark‐line defects (DLD’s) and/or 〈110〉 DLD’s were often observed in the electronluminescence or photoluminescence patterns of the active regions. Two phenomena were associated with this type of degradation as follows: (i) generation of high density of dislocations and dislocation loops (in some cases, stacking faults) by dislocation glide motion due to the relaxation of the stress concentrated in the active region. (ii) subsequent development of dislocation dipoles from the glided dislocations (often accompanied with many small dislocation loops). In some of the degraded diodes, the phenomenon (ii) did not occur. There might be a certain threshold for the phenomenon (ii).This publication has 21 references indexed in Scilit:
- Defect structure of degraded Ga1−xAlxAs double-heterostructure light-emitting diodesJournal of Applied Physics, 1979
- Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasersJournal of Electronic Materials, 1979
- Nature of 〈110〉 dark-line defects in degraded (GaAl)As-GaAs double-heterostructure lasersApplied Physics Letters, 1977
- Defect structure of 〈100〉 dark lines in the active region of a rapidly degraded Ga1−xAlxAs LEDJournal of Applied Physics, 1977
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure LaserJapanese Journal of Applied Physics, 1977
- Defect structure induced during forward-bias degradation of GaP green-light-emitting diodesJournal of Applied Physics, 1976
- Defect structure of degraded GaAlAs-GaAs double heterojunction lasersPhilosophical Magazine, 1975
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structuresApplied Physics Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973