High-quality 1.3 µm GaInNAs single quantum well lasers grown by MBE
- 14 October 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (21) , 1338-1339
- https://doi.org/10.1049/el:20046557
Abstract
High-quality 1.3 µm GaInNAs/GaNAs single quantum well lasers grown by molecular beam epitaxy are reported. The broad area lasers show a record low threshold current density of 318 A/cm2 for a cavity length of 1 mm, a transparent current density of 84 A/cm2, and a characteristic temperature of 103 K from 8 to 70°C.Keywords
This publication has 8 references indexed in Scilit:
- Gradient direction similarity measureElectronics Letters, 2003
- MOVPE-grown GaInNAs VCSELs at 1.3 µm with conventional mirror design approachElectronics Letters, 2003
- Low-threshold-current-density 1300-nm dilute-nitride quantum well lasersApplied Physics Letters, 2002
- Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasersIEEE Photonics Technology Letters, 2002
- Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/mIEEE Photonics Technology Letters, 2002
- Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxyApplied Physics Letters, 2001
- 8 W continuous wave operation of InGaAsN lasersat 1.3 µmElectronics Letters, 2000
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997