Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
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- 30 September 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (14) , 2523-2525
- https://doi.org/10.1063/1.1511290
Abstract
Metalorganic chemical vapor deposition-grown In 0.4 Ga 0.6 As 0.995 N 0.005 quantum well(QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm 2 (for L=2000 μm) and 75 A/cm 2 , respectively. The utilization of a tensile-strained GaAs 0.67 P 0.33 buffer layer and GaAs 0.85 P 0.15 barrier layers allows a highly-compressively-strained In 0.4 Ga 0.6 As 0.995 N 0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (η inj ∼97%).Keywords
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