Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

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Abstract
We have achieved 160 A/cm 2 threshold current density of a 1.21 μm InGaAs/GaAs quantum well(QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (∼3), while a higher As/III ratio (∼10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio.